

The XL-PLPT9 450MD-7W semiconductor laser is an ultra-high-power 440nm blue-violet single-mode laser diode. It comes in a metal TO-90 coaxial package and has a typical CW (continuous wave) optical output of 7W (TC=25℃). The typical threshold current is 0.30A, operating current ≤4.0A, operating voltage ≤4.8V, and the maximum junction temperature is 135℃. This device is currently the most powerful model in the series (7W) and features high modulation bandwidth and low beam divergence (fast axis 41~54°, slow axis 6~11°). It's perfect for applications that demand high-power blue-violet light sources, like LiDAR, industrial processing, medical biophotonics, research, and defense.

Optical Output Power: 7W in continuous wave mode (TC=25℃)
Typical Emission Wavelength: 450nm (blue range, marked on the front page)
Operating Mode: Supports continuous wave (CW) and pulsed mode, efficient radiation source
Laser Type: Single-mode semiconductor laser
Modulation Performance: High modulation bandwidth
Package Type: TO-90 package
Environment & Reliability: RoHS compliant, MSL level 2
Key Electrical Parameters (Ta=25℃):
Threshold Current (Ith): Typical 0.30A, Max 0.40A
Operating Current (Iop): Typical 3.7A (Po=4W), Max 4.0A (Po=4W); Recommended ≤3.6A
Operating Voltage (Vop): Typical 4.1V, Max 4.8V (Po=4W)
Center Wavelength Range: 434~446nm (testing condition Po=4W), Typical 440nm (table value; front page shows 450nm likely due to different test conditions)
Beam Divergence Angle (Fast Axis/Slow Axis, 50% peak): Fast Axis 41°~49°, Slow Axis 6°~11°
Misalignment Beam Angle: ±3° (Fast Axis/Slow Axis)
Differential Efficiency: Typical 1.6 W/A (Po=4W)
Absolute Maximum Ratings:
Optical Output Power (Po): 7W
Operating Current (Iop): 4A (absolute max)
Reverse Voltage (VR): 2V
Operating Temperature (TOP): -20℃~60℃
Storage Temperature (Tstg): -40℃~85℃
Junction Temperature (Tj): 135℃
Soldering Conditions: Wave soldering 240℃ ≤6s, Manual soldering 300℃ ≤3s
Optical Output Power: 7W in continuous wave mode (TC=25℃)
Typical Emission Wavelength: 450nm (blue range, marked on the front page)
Operating Mode: Supports continuous wave (CW) and pulsed mode, efficient radiation source
Laser Type: Single-mode semiconductor laser
Modulation Performance: High modulation bandwidth
Package Type: TO56 package with built-in photodiode (PD)
Environment & Reliability: RoHS compliant, MSL level 2
Key Electrical Parameters (Ta=25℃):
Threshold Current (Ith): Typical 0.30A, Max 0.40A
Operating Current (Iop): Typical 3.7A (Po=4W), Max 4.0A (Po=4W); Recommended ≤3.6A
Operating Voltage (Vop): Typical 4.1V, Max 4.8V (Po=4W)
Center Wavelength Range: 434~446nm (testing condition Po=4W), Typical 440nm (table value; front page shows 450nm likely due to different test conditions)
Beam Divergence Angle (Fast Axis/Slow Axis, 50% peak): Fast Axis 41°~49°, Slow Axis 6°~11°
Misalignment Beam Angle: ±3° (Fast Axis/Slow Axis)
Differential Efficiency: Typical 1.6 W/A (Po=4W)
Absolute Maximum Ratings:
Optical Output Power (Po): 7W
Operating Current (Iop): 4A (absolute max)
Reverse Voltage (VR): 2V
Operating Temperature (TOP): -20℃~60℃
Storage Temperature (Tstg): -40℃~85℃
Junction Temperature (Tj): 135℃
Soldering Conditions: Wave soldering 240℃ ≤6s, Manual soldering 300℃ ≤3s