Z6尊龙凯时

A national high-tech enterprise specializing in the research and development, production, and sales of light-emitting diode products
Z6·尊龙凯时「中国」官方网站
XL-PT15-21BTR
Z6·尊龙凯时「中国」官方网站
XL-PT15-21BTR

The XL-PT15-21BTR is a 3215 package (3.2×1.5×1.0mm) surface-mount infrared phototransistor (PT). It uses black epoxy (which effectively blocks visible light interference), has a peak sensitivity wavelength of 940nm, and a detection wavelength range of 400~1100nm (covering from visible light to infrared, though the black epoxy filters out most visible light). This NPN phototransistor's output collector current changes linearly with the intensity of received infrared radiation, with a milliamp-level output current (typically 0.3~0.9mA). It can directly drive logic circuits or microcontroller IO ports without external amplification. Suitable for SMT reflow processes, it meets ROHS environmental standards and has a moisture sensitivity level of MSL 3. It's an ideal low-cost receiver for applications like photoelectric switches, light barriers, and smoke detection.

Z6·尊龙凯时「中国」官方网站
PDF EDA Model
Product Characteristics

Optical Performance:

Peak Sensing Wavelength (λP): 940 nm

Sensing Wavelength Range (λ1/2): 400~1100 nm (Covers visible light to infrared spectrum. The black encapsulant filters visible light, so the actual effective waveband is mainly infrared.)

On-State Collector Current (IC(ON)): 0.3~0.9 mA (Ee=1 mW/cm?, VCE=5 V, sorted into IC6-18 grades)

Collector Dark Current (ICEO): ≤100 nA (VCE=20 V, no illumination. Low dark current guarantees high signal-to-noise ratio.)

Rise / Fall Time (Tr/Tf): Typical 15 μs / 15 μs (VCE=5 V, IC=1 mA, RL=1 kΩ, fast response speed)

Collector-Emitter Saturation Voltage (VCE(SAT)): ≤0.4 V (IC=2 mA, Ee=1 mW/cm?)


Electrical Specifications (Ta=25℃):

Maximum Power Dissipation (PD): 75 mW (Lower than 150 mW of photodiodes. Observe power dissipation limits.)

Collector-Emitter Voltage (VCEO): 30 V

Emitter-Collector Voltage (VECO): 5 V

Collector Current (IC): 20 mA

Collector-Emitter Breakdown Voltage (BVCEO): ≥30 V (IC=100 μA, no illumination)

Operating Temperature: -20℃ ~ +85℃

Storage Temperature: -40℃ ~ +85℃

Soldering Conditions: Reflow soldering: 260℃, ≤6 s; Manual soldering: 300℃, ≤3 s


Environmental & Reliability:

Passed reliability tests including 1000-hour operating life, high temperature & high humidity, and temperature cycling (See Page 7 of datasheet for details).

Photocurrent binning available (IC6-18: 0.3~0.9 mA) to facilitate consistent mass selection.


Others:

Black encapsulant package effectively suppresses ambient visible light interference and improves signal-to-noise ratio.

Supplied on EIA-standard tape & reel, compatible with high-speed SMT mounting.

Moisture-proof and anti-static sealed packaging. It is recommended to use within 7 days after opening.

Product Application

Smart Products & Home Appliances: Iris recognition, smart door locks, proximity sensing


IR Emitter Mini Light Barrier: Object detection, position sensing, counting


Floppy Disk Drives: Disk rotation detection, write-protect detection


Photoelectric Switches: Industrial automation, security detection


Smoke Detectors: Photoelectric smoke alarm (used with IR emitting diodes)


Infrared Sensors: PIR (Passive Infrared) supporting circuit, infrared communication reception


Sensor Switches: Automatic faucets, automatic doors, smart lighting

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